NTS4173PT1G, MOSFETs PFET SC70 30V TR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005526619
- Артикул
- NTS4173PT1G
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- Power MOSFET
- Brand
- ON Semiconductor
- Width
- 1.24 mm
Цена по запросу
(от 27,94 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -0,8А, Idm: -5А, 290мВт
Технические параметры
| RoHS | Details |
| Type | Power MOSFET |
| Brand | ON Semiconductor |
| Width | 1.24 mm |
| Height | 0.85 mm |
| Length | 2.1 mm |
| Series | NTS4173P |
| Product | MOSFET Small Signal |
| FET Type | P-Channel |
| Fall Time | 7.1 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 6.7 ns |
| Vgs (Max) | ±12V |
| Technology | Si |
| Вес, г | 0.01 |
| Unit Weight | 0.000219 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-323 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Структура | MOSFET |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Pd - Power Dissipation | 350 mW |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.2A, 10V |
| Особенности | - |
| Power Dissipation (Max) | 290mW(Ta) |
| Supplier Device Package | SC-70-3(SOT323) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 350 mW |
| Typical Gate Charge @ Vgs | 10.1 nC @ 10 V, 4.8 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 12 V |
| Typical Turn-On Delay Time | 7.7 ns |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 19.9 ns |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V |
| Maximum Drain Source Voltage | 30 V |
| Id - Continuous Drain Current | -1.3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 30 V |
| Forward Transconductance - Min | 3.6 S |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 280 mΩ |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 1.3 A |
| Rds On - Drain-Source Resistance | 165 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 15 V |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A(Ta) |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.29 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |