NTR5103NT1G, MOSFETs NFET SOT23 60V 310MA 2.5
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739240
- Артикул
- NTR5103NT1G
- Бренд
- ON Semiconductor***
- Width
- 1.4mm
- Brand:
- onsemi
- Pin Count
- 3
- Fall Time:
- 3.6 ns
Цена по запросу
(от 15,63 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 0,31А, 0,42Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 1.4mm |
| Brand: | onsemi |
| Pin Count | 3 |
| Fall Time: | 3.6 ns |
| Rise Time: | 1.2 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | sot23 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 810 pC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Pd - Power Dissipation: | 420 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 mW |
| Typical Gate Charge @ Vgs | 0.81 nC @ 5 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 1.7 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 4.8 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 310 mA |
| Maximum Gate Threshold Voltage | 2.6V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1.9V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 530 mS |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Continuous Drain Current | 260 mA |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.31 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |