NTR1P02LT3G, MOSFETs PFET SOT23 20V .160R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006218161
- Артикул
- NTR1P02LT3G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 1.4mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 34,98 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 1.3A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 3 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Корпус | sot23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Структура | MOSFET |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 15 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 400 mW |
| Typical Gate Charge @ Vgs | 3.1 nC @ 4.5 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.25V |
| Maximum Power Dissipation (mW) | 400 |
| Typical Gate Charge @ Vgs (nC) | 5.5@4V |
| Maximum Drain Source Resistance | 350 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 1.3 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Gate Threshold Voltage (V) | 1.25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.3 |
| Typical Input Capacitance @ Vds (pF) | 225@5V |
| Maximum Drain Source Resistance (mOhm) | 220@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |