NTR1P02LT1G, Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001206389
- Артикул
- NTR1P02LT1G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 1.4mm
- Brand:
- onsemi
- Series:
- NTR1P02L
Цена по запросу
(от 15 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET |
| Width | 1.4mm |
| Brand: | onsemi |
| Series: | NTR1P02L |
| Product: | MOSFET Small Signals |
| Pin Count | 3 |
| Fall Time: | 15 ns |
| Rise Time: | 15 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.1 nC |
| Структура | MOSFET |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1V |
| Особенности | - |
| Pd - Power Dissipation: | 400 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 400 mW |
| Typical Gate Charge @ Vgs | 3.1 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 18 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.3 A |
| Maximum Gate Threshold Voltage | 1.25V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.7V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 350 mΩ |
| Maximum Continuous Drain Current | 1.3 A |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |