NTR0202PLT1G, MOSFETs -20V -400mA P-Channel
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005375539
- Артикул
- NTR0202PLT1G
- Бренд
- ON Semiconductor***
- HTS
- COMPONENTS
- PPAP
- No
- Type:
- MOSFET
- Brand:
- onsemi
Цена по запросу
(от 40,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, -20В, -400мА, 225мВт, SOT23-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | COMPONENTS |
| PPAP | No |
| Type: | MOSFET |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | NTR0202PL |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 4 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 6 ns |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package Width | 1.3 |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Mounting Style: | SMD/SMT |
| EDA / CAD Models | NTR0202PLT1G by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.18 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 6 |
| Особенности | - |
| Pd - Power Dissipation: | 225 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 400 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 225 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 2.18 |
| Typical Gate Charge @ Vgs (nC) | 2.18@10V |
| Forward Transconductance - Min: | 0.5 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Diode Forward Voltage (V) | 1 |
| Rds On - Drain-Source Resistance: | 800 mOhms |
| Typical Diode Forward Voltage (V) | 0.8 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 70@5V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (MOhm) | 800@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |