NTMS5P02R2G, SOIC-8 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062446469
- Артикул
- NTMS5P02R2G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi
- Fall Time:
- 90 ns, 55 ns
- Rise Time:
- 70 ns, 25 ns
Цена по запросу
(от 139,49 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi |
| Fall Time: | 90 ns, 55 ns |
| Rise Time: | 70 ns, 25 ns |
| Вес, г | 0.22 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 35 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 2.5 W |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Typical Turn-On Delay Time: | 22 ns, 18 ns |
| Typical Turn-Off Delay Time: | 65 ns, 70 ns |
| Id - Continuous Drain Current: | 5.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 15 S |
| Rds On - Drain-Source Resistance: | 26 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.25 V |