NTMFS5H409NLT1G, Trans MOSFET N-CH 40V 41A 5-Pin SO-FL EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002234124
- Артикул
- NTMFS5H409NLT1G
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor
- Brand:
- onsemi
- Series
- NTMFS5H
Цена по запросу
(от 270 ₽)
Минимальный заказ: 120 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощный полевой транзистор, 40 В, 0,0016 Ом, N-канальный, MOSFET
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor |
| Brand: | onsemi |
| Series | NTMFS5H |
| Fall Time | 14 ns |
| Packaging | Reel |
| Rise Time | 130 ns |
| Fall Time: | 14 ns |
| Rise Time: | 130 ns |
| Technology | Si |
| Вес, г | 11.2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | onsemi |
| Package/Case: | SO-8FL-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SO-FL-8 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 89 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 89 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1500 |
| Factory Pack Quantity: | 1500 |
| Pd - Power Dissipation | 140 W |
| Особенности | - |
| Pd - Power Dissipation: | 140 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 17 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 40 ns |
| Id - Continuous Drain Current | 270 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 300 S |
| Id - Continuous Drain Current: | 270 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 300 S |
| Rds On - Drain-Source Resistance | 1.6 mOhms |
| Rds On - Drain-Source Resistance: | 1.6 mOhms |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 41 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 140 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |