NTMFS4C302NT1G, МОП-Транзистор SO-8-FL-5,8мм
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017629885
- Артикул
- NTMFS4C302NT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 75,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.15 |
| PCB changed | 5 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Корпус | SO-8 |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL EP |
| Структура | МОП-транзистор |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 19 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3130 |
| Typical Gate Charge @ 10V (nC) | 82 |
| Typical Gate Charge @ Vgs (nC) | 82@10V|37@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 42 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 41 |
| Typical Input Capacitance @ Vds (pF) | 5780@15V |
| Maximum Drain Source Resistance (mOhm) | 1.15@10V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 96 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |