NTMD6N03R2G, Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001120196
- Артикул
- NTMD6N03R2G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Category
- Power MOSFET
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 120 ₽)
Минимальный заказ: 756 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 30V 6A 8-контактный SOIC N T/R
Технические параметры
| PPAP | No |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Структура | N |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 34, 45 |
| Typical Rise Time (ns) | 22, 27 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 19 |
| Typical Gate Charge @ Vgs (nC) | 19@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9, 13 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 22, 45 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 680@24V |
| Maximum Drain-Source Resistance (mOhm) | 32@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |