Dual N-Channel MOSFET, 4 A, 30 V, 8-Pin SOIC NTMD4N03R2G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8012776640
- Артикул
- NTMD4N03R2G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type:
- MOSFET
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 136,86 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 30V 4A 8-контактный SOIC N T/R
Технические параметры
| PPAP | No |
| Type: | MOSFET |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | NTMD4N03 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 10 ns, 10 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 14 ns, 14 ns |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Transistor Type: | 2 N-Channel |
| Maximum IDSS (uA) | 10 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8 nC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 14 |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 7 ns, 7 ns |
| Typical Turn-Off Delay Time: | 16 ns, 16 ns |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 8 |
| Typical Gate Charge @ Vgs (nC) | 8@10V |
| Forward Transconductance - Min: | 6 S, 6 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 95 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.4 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Diode Forward Voltage (V) | 1 |
| Rds On - Drain-Source Resistance: | 60 mOhms, 60 mOhms |
| Typical Diode Forward Voltage (V) | 0.82 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.9 |
| Typical Reverse Recovery Time (ns) | 14 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 285@20V |
| Typical Reverse Recovery Charge (nC) | 8 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 60@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 12 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 35@20V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.048 Ом |