NTLJS3113PT1G, Trans MOSFET P-CH 20V 5.8A 6-Pin WDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001119304
- Артикул
- NTLJS3113PT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Category
- Power MOSFET
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 48 ₽)
Минимальный заказ: 1443 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 5.8A с 6-контактным разъемом WDFN EP T/R
Технические параметры
| PPAP | No |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Obsolete |
| Configuration | Single Quad Drain |
| Package Width | 2 |
| Package Length | 2 |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Структура | p |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 56.5 |
| Typical Rise Time (ns) | 17.5 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3300 |
| Typical Gate Charge @ Vgs (nC) | 13@4.5V |
| Maximum Gate-Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 213 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.5 |
| Typical Turn-Off Delay Time (ns) | 60 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.78 |
| Typical Gate to Drain Charge (nC) | 2.9 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Gate Threshold Voltage (V) | 0.67 |
| Typical Gate to Source Charge (nC) | 2.2 |
| Typical Reverse Recovery Time (ns) | 70.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1329@16V |
| Typical Reverse Recovery Charge (nC) | 44 |
| Maximum Drain-Source Resistance (mOhm) | 40@4.5V |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum Positive Gate-Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 23 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 90@1.5V, 67@1.8V, 44@2.5V, 32@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.3 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120@16V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.8 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 180 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.8 |