NTLJS2103PTBG, Trans MOSFET P-CH 12V 5.9A 6-Pin WDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001165727
- Артикул
- NTLJS2103PTBG
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Product:
- MOSFET Small Signals
- Fall Time:
- 27 ns
- Rise Time:
- 27 ns
Цена по запросу
(от 63 ₽)
Минимальный заказ: 1303 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Product: | MOSFET Small Signals |
| Fall Time: | 27 ns |
| Rise Time: | 27 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | WDFN-6 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.9 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 74 ns |
| Id - Continuous Drain Current: | 5.9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |