NTLJS17D0P03P8ZTAG, 30V 11.7A 2.4W 1V 1 P-Channel WDFN-6(2x2) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064268342
- Артикул
- NTLJS17D0P03P8ZTAG
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 70 ns, 72 ns
- Rise Time:
- 18 ns, 106 ns
- Вес, г
- 0.04
Цена по запросу
(от 57 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 70 ns, 72 ns |
| Rise Time: | 18 ns, 106 ns |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | WDFN-6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 23 nC, 38 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2.4 W |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Typical Turn-On Delay Time: | 9 ns, 18 ns |
| Typical Turn-Off Delay Time: | 40 ns, 85 ns |
| Id - Continuous Drain Current: | 11.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 34 S |
| Rds On - Drain-Source Resistance: | 11.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |