NTLJD3115PT1G, Trans MOSFET P-CH 20V 3.3A 6-Pin WDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001215113
- Артикул
- NTLJD3115PT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Product:
- MOSFET Small Signals
- Fall Time:
- 13.2 ns, 15 ns
- Rise Time:
- 13.2 ns, 15 ns
Цена по запросу
(от 76 ₽)
Минимальный заказ: 1226 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Product: | MOSFET Small Signals |
| Fall Time: | 13.2 ns, 15 ns |
| Rise Time: | 13.2 ns, 15 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | WDFN-6 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 6.2 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.5 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 5.2 ns, 5.5 ns |
| Typical Turn-Off Delay Time: | 13.7 ns, 19.8 ns |
| Id - Continuous Drain Current: | 3.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 106 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |