NTK3139PT1G, Транзистор P-MOSFET, полевой, -20В, -0,57А, 0,45Вт, SOT723
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066740921
- Артикул
- NTK3139PT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 0.85mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 43,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| Width | 0.85mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.5 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-723 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 0.8 |
| Package Length | 1.2 |
| EDA / CAD Models | NTK3139PT1G by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | SOT-723 |
| Maximum IDSS (uA) | 1 |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 20.3 |
| Typical Rise Time (ns) | 5.8 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 550 mW |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation (mW) | 550 |
| Maximum Drain Source Resistance | 2.2 Ω |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Continuous Drain Current | 870 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 32.7 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.78 |
| Typical Input Capacitance @ Vds (pF) | 113@16V |
| Maximum Drain Source Resistance (MOhm) | 480@4.5V |
| Maximum Gate Source Leakage Current (nA) | 2000 |