NTJS3157NT1G, Транзистор: N-MOSFET; 20В; 2,3А; 1Вт; SOT363
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060233834
- Артикул
- NTJS3157NT1G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi
- Fall Time:
- 11 ns
- Rise Time:
- 12 ns
Цена по запросу
(от 24,02 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi |
| Fall Time: | 11 ns |
| Rise Time: | 12 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SC-88-6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 6.9 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 21 ns |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 9 S |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |