NTJD5121NT1G, Dual MOSFET, N Channel, 60 V, 60 V, 304 mA, 304 mA, 1 ohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8436471084
- Артикул
- NTJD5121NT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Brand
- ON Semiconductor
- Width
- 1.25 mm
Цена по запросу
(от 35 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET x2, полевой, 60В, 0,295А, 0,25Вт, SC88 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| RoHS | Details |
| Brand | ON Semiconductor |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Length | 2 mm |
| Series | NTJD5121N |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 32 ns |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Rise Time | 34 ns |
| Automotive | No |
| Technology | Si |
| Вес, г | 0.454 |
| PCB changed | 6 |
| Part Status | Active |
| Unit Weight | 0.000212 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-363 |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-88-6 |
| Transistor Type | 2 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | SC-88 |
| Number of Channels | 2 Channel |
| Структура | N-Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SC |
| Pd - Power Dissipation | 250 mW |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 34 |
| Особенности | полевая сборка |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 266 mW |
| Typical Gate Charge @ Vgs | 0.9 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 22 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-Off Delay Time | 34 ns |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | 295 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation (mW) | 266 |
| Typical Gate Charge @ Vgs (nC) | 0.9 4.5V |
| Maximum Drain Source Resistance | 2.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 22 |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Typical Turn-Off Delay Time (ns) | 34 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.295 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 26 20V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Maximum Drain Source Resistance (mOhm) | 1600 10V |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.304 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1 Ом |