NTJD4105CT2G, Транзистор: N/P-MOSFET; 20/-8В; 460/-558мА; 140мВт; SC88,SOT363
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048188328
- Артикул
- NTJD4105CT2G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi
- Product:
- MOSFET Small Signals
- Fall Time:
- 506 ns, 36 ns
Цена по запросу
(от 24,73 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi |
| Product: | MOSFET Small Signals |
| Fall Time: | 506 ns, 36 ns |
| Rise Time: | 227 ns, 23 ns |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SOT-363-6 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 1.3 nC, 2.2 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 270 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V, -8 V, +8 V |
| Typical Turn-On Delay Time: | 83 ns, 13 ns |
| Typical Turn-Off Delay Time: | 786 ns, 50 ns |
| Id - Continuous Drain Current: | 630 mA, 775 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2 S |
| Rds On - Drain-Source Resistance: | 290 mOhms, 220 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 920 mV, 830 mV |