NTJD4105CT1G, Транзистор N/P-МОП, полевой, 20/-8В, 630/-755мА, 270мВт, SC88
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017537970
- Артикул
- NTJD4105CT1G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi
- RDS-on
- 375@4.5V@N Channel|300@4.5V@P Channel mOhm
- Package
- 6SC-88
Цена по запросу
(от 29 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Сборка из полевых транзисторов, N/P-канальный, 20 В/8 В, 0.27Вт
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi |
| RDS-on | 375@4.5V@N Channel|300@4.5V@P Channel mOhm |
| Package | 6SC-88 |
| Series: | NTJD4105C |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| Rad Hard | No |
| Packaging | Cut Tape |
| Fall Time: | 506 ns, 36 ns |
| Rise Time: | 227 ns, 23 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.3 nC, 2.2 nC |
| Typical Fall Time | 506@N Channel|36@P Channel ns |
| Typical Rise Time | 227@N Channel|23@P Channel ns |
| Структура | N/P-МОП |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Operating Temperature | -55 to 150 ?C |
| Особенности | комплементарная пара транзисторов |
| Pd - Power Dissipation: | 550 mW |
| Typical Turn-On Delay Time | 83@N Channel|13@P Channel ns |
| Vgs - Gate-Source Voltage: | -12 V, +12 V, -8 V, +8 V |
| Maximum Gate Source Voltage | ?12@N Channel|?8@P Channel V |
| Typical Turn-Off Delay Time | 786@N Channel|50@P Channel ns |
| Typical Turn-On Delay Time: | 83 ns, 13 ns |
| Maximum Drain Source Voltage | 20@N Channel|8@P Channel V |
| Typical Turn-Off Delay Time: | 786 ns, 50 ns |
| Id - Continuous Drain Current: | 630 mA, 775 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2 S, 2 S |
| Maximum Continuous Drain Current | 0.63@N Channel|0.775@P Channel A |
| Rds On - Drain-Source Resistance: | 375 mOhms, 900 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV, 450 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.755 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.27 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |