NTHS4101PT1G, Power MOSFET, P Channel, 20 V, 4.8 A, 0.021 ohm, ChipFET, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8620745649
- Артикул
- NTHS4101PT1G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 1.7mm
- Brand:
- onsemi
- Series:
- NTHS4101P
Цена по запросу
(от 167 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
NTHS4101PT1G ON Semiconductor Транзистор
Технические параметры
| Type: | MOSFET |
| Width | 1.7mm |
| Brand: | onsemi |
| Series: | NTHS4101P |
| Product: | MOSFET Small Signal |
| Pin Count | 8 |
| Fall Time: | 28 ns |
| Rise Time: | 28 ns |
| Вес, г | 0.056 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | ChipFET |
| Subcategory: | MOSFETs |
| Корпус | ChipFET |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | ChipFET-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 35 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 1.3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 25 nC @ 4.5 V dc |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 75 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 6.7 A |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 15 S |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Continuous Drain Current | 6.7 A |
| Rds On - Drain-Source Resistance: | 42 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.021 Ом |