1 Type N-Channel MOSFET Enhancement, 4-Pin TO-247-4L NTHL022N120M3S
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8040445478
- Артикул
- NTHL022N120M3S
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Pin Count
- 4
- Fall Time:
- 14 ns
- Packaging:
- Tube
Цена по запросу
(от 4 810 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор ON Semiconductor на карбиде кремния используется в ИБП, преобразователяx постоянного тока в постоянный и повышающиx инвертораx.
Технические параметры
| Brand: | onsemi |
| Pin Count | 4 |
| Fall Time: | 14 ns |
| Packaging: | Tube |
| Rise Time: | 50 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247-4L |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 139 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | SiC |
| Transistor Polarity: | N-Channel |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 352 W |
| Vgs - Gate-Source Voltage: | -10 V, +22 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 19 ns |
| Maximum Drain Source Voltage | 1200 V |
| Typical Turn-Off Delay Time: | 44 ns |
| Id - Continuous Drain Current: | 68 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 34 S |
| Maximum Continuous Drain Current | 89 A |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |