NTH4L014N120M3P, TO-247-4 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062071671
- Артикул
- NTH4L014N120M3P
- Бренд
- ON Semiconductor***
- FET Type
- N-Channel
- Vgs (Max)
- +22V, -10V
- Technology
- SiCFET(Silicon Carbide)
- Вес, г
- 8.69
Цена по запросу
(от 3 440,07 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 1200 В 127А (Tc) 686 Вт (Tc) со сквозным отверстием TO-247-4L
Технические параметры
| FET Type | N-Channel |
| Vgs (Max) | +22V, -10V |
| Technology | SiCFET(Silicon Carbide) |
| Вес, г | 8.69 |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Encapsulated Type | Single Tube |
| Input Capacitance | 6230pF |
| Power Dissipation | 343W |
| Total Gate Charge | 329nC |
| Vgs(th) (Max) @ Id | 4.63V @ 37mA |
| Drain Source Voltage | 1200V |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 74A, 18V |
| Power Dissipation (Max) | 686W(Tc) |
| Supplier Device Package | TO-247-4L |
| Continuous Drain Current | 127A |
| Gate Charge (Qg) (Max) @ Vgs | 329 nC @ 18 V |
| Reverse Transfer Capacitance | 29pF |
| Drain Source Threshold Voltage | 3V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6230 pF @ 800 V |
| Drain-Source On-State Resistance(15V) | 16mΩ |
| Drain-Source On-State Resistance(18V) | 14mΩ |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 127A(Tc) |