NTGS3446T1G, Транзистор: N-MOSFET; полевой; 20В; 5,1А; 2Вт; TSOP6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017550355
- Артикул
- NTGS3446T1G
- Бренд
- ON Semiconductor***
- MSL
- MSL 1-Unlimited
- PPAP
- No
- Type
- -
- Type:
- MOSFET
Цена по запросу
(от 91,02 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы TSOP-6-1,5 мм ROHS
Технические параметры
| MSL | MSL 1-Unlimited |
| PPAP | No |
| Type | - |
| Type: | MOSFET |
| Brand: | onsemi |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signals |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 12 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 12 ns |
| Вес, г | 0.12 |
| No. of Pins | 6Pins |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | TSOP6 |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain |
| Manufacturer: | onsemi |
| Package Width | 1.5 mm |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Length | 3 mm |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSOP-6 |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Mounting | Surface Mount |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Transistor Case Style | TSOP |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | - |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 12 |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Total Gate Charge (Qg@Vgs) | - |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Continuous Drain Current Id | 2.5A |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 9 ns |
| Input Capacitance (Ciss@Vds) | - |
| Typical Turn-Off Delay Time: | 35 ns |
| Continuous Drain Current (Id) | - |
| Id - Continuous Drain Current: | 2.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 8@4.5V |
| Forward Transconductance - Min: | 12 S |
| Maximum Gate-Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 200 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 2 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Gate Source Threshold Voltage Max | 850mV |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Typical Diode Forward Voltage (V) | 0.74 |
| Typical Gate to Drain Charge (nC) | 2 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 0.85 |
| Typical Gate to Source Charge (nC) | 2 |
| Typical Reverse Recovery Time (ns) | 20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 510@10V |
| Typical Reverse Recovery Charge (nC) | 10 |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain-Source Resistance (mOhm) | 45@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 36@4.5V|44@2.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 60@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 244 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | - |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | - |