NTGS3443T1G, Транзистор P-МОП, полевой, -20В, -3,1А, 1Вт, TSOP6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048071212
- Артикул
- NTGS3443T1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 3mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 60 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощность MOSFET -20 В -4,4 А, 65 Мом, Одноканальный TSOP-6, Сверxнизкий RDS (вкл.), Повышенный КПД, продлевающий срок службы батареи.
Технические параметры
| PPAP | No |
| Width | 3mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | TSOP-6 |
| Configuration | Single Quad Drain |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Automotive Standard | AEC-Q101 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 18 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2 W |
| Typical Gate Charge @ Vgs | 7.5 nC @ 4.5 V |
| Maximum Gate Source Voltage | +12 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 7.5 4.5V |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 320 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Continuous Drain Current | 2.2 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 2.5 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.83 |
| Typical Gate to Drain Charge (nC) | 2.9 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 0.95 |
| Typical Gate to Source Charge (nC) | 1.4 |
| Typical Reverse Recovery Time (ns) | 30 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 565 5V |
| Maximum Drain Source Resistance (mOhm) | 65 4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120 5V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 244 |