NTDV3055L104T4G, Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001331285
- Артикул
- NTDV3055L104T4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 98 ₽)
Минимальный заказ: 869 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 12A 3-контактный (2+Tab) DPAK T/R Автомобильный AEC-Q101
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Структура | N-Channel |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 40.5 |
| Typical Rise Time (ns) | 104 |
| Особенности | автомобильные приложения |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 48000 |
| Typical Gate Charge @ Vgs (nC) | 7.4@5V |
| Maximum Gate Source Voltage (V) | ±15 |
| Typical Output Capacitance (pF) | 105 |
| Typical Turn-On Delay Time (ns) | 9.2 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 4.3 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.95 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.6 |
| Typical Reverse Recovery Time (ns) | 35 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 316@25V |
| Typical Reverse Recovery Charge (nC) | 40 |
| Maximum Drain Source Resistance (MOhm) | 104@5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 45 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 35@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 100 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |