NTD6416ANLT4G, Trans MOSFET N-CH 100V 19A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001172898
- Артикул
- NTD6416ANLT4G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 40 ns
- Rise Time:
- 16 ns
- Вес, г
- 1
Цена по запросу
(от 130 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 40 ns |
| Rise Time: | 16 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 25 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 71 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 35 ns |
| Id - Continuous Drain Current: | 19 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Rds On - Drain-Source Resistance: | 74 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |