NTD5C648NLT4G, NTD5C648NLT4G ON Semiconductor Transistors MOSFETs N-CH 60V 22A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002328079
- Артикул
- NTD5C648NLT4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Width
- 6.22mm
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 320 ₽)
Минимальный заказ: 80 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
NTD5C648NLT4G НА полупроводниковыx транзистораx MOSFETs N-CH 60V 22A Автомобильный 3-контактный(2+Tab) DPAK T/R - Arrow.com
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 6.22mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Структура | N-Channel |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 68 |
| Typical Rise Time (ns) | 91 |
| Особенности | автомобильные приложения |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 76 W |
| Typical Gate Charge @ Vgs | 17 nC @ 4.5 |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation (mW) | 4400 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 39 |
| Typical Gate Charge @ Vgs (nC) | 17@4.5V|39@10V |
| Maximum Drain Source Resistance | 4.1 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 21 |
| Maximum Continuous Drain Current | 91 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Maximum Gate Threshold Voltage (V) | 60 |
| Typical Gate Threshold Voltage (V) | 4.5|10 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 2900@30V |
| Maximum Drain Source Resistance (mOhm) | 4.1@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 22(Ta)|91(Tc) |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 22 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 76 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |