NTD5867NLT4G, Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001065374
- Артикул
- NTD5867NLT4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- ON Semiconductor
Цена по запросу
(от 950 ₽)
Минимальный заказ: 32 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 20А, 36Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | ON Semiconductor |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 2.4 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 12.6 ns |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.4 |
| PCB changed | 2 |
| Part Status | LTB |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Qg - Gate Charge | 15 nC |
| Supplier Package | DPAK |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 36 W |
| Typical Fall Time (ns) | 2.4 |
| Typical Rise Time (ns) | 12.6 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current | 20 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 8 S |
| Maximum Power Dissipation (mW) | 36000 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15 10V|7.6 4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance | 39 mOhms |
| Typical Turn-Off Delay Time (ns) | 18.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 20 |
| Typical Input Capacitance @ Vds (pF) | 675 25V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Maximum Drain Source Resistance (mOhm) | 39 10V |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 20 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |