NTD4860NT4G, Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001279630
- Артикул
- NTD4860NT4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
Цена по запросу
(от 120 ₽)
Минимальный заказ: 710 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 25V 13A 3-контактный(2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max)mm |
| Package Length | 6.73(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Структура | N-Channel |
| Standard Package Name | TO-252 |
| Power Dissipation (Pd) | 2W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4.3|2.3 |
| Typical Rise Time (ns) | 20.1|17 |
| Особенности | - |
| Total Gate Charge (Qg@Vgs) | 16.5nC@10V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.308nF@12V |
| Continuous Drain Current (Id) | 65A |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 21.8 |
| Typical Gate Charge @ Vgs (nC) | 11@4.5V|21.8@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 342 |
| Typical Turn-On Delay Time (ns) | 12.2|7.1 |
| Maximum Drain-Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 15.2|22 |
| Typical Gate to Drain Charge (nC) | 4.7 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 3.9 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13 |
| Typical Input Capacitance @ Vds (pF) | 1308@12V |
| Typical Reverse Recovery Charge (nC) | 3.5 |
| Maximum Drain-Source Resistance (mOhm) | 7.5@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 169pF@12V |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 25 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |