NTD360N80S3Z, Транзистор: N-MOSFET
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- Код товара
- 8062429923
- Артикул
- NTD360N80S3Z
- Бренд
- ON Semiconductor***
- Type
- Power MOSFET
- Brand:
- onsemi
- Series
- SUPERFET III
- Mounting
- Surface Mount
Цена по запросу
(от 270 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-канальный 800В 13А с 3-контактным разъемом TO-252 на магнитной ленте и катушке (альтернативный вариант: NTD360N80S3Z)
Технические параметры
| Type | Power MOSFET |
| Brand: | onsemi |
| Series | SUPERFET III |
| Mounting | Surface Mount |
| Polarity | N |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Mounting Style: | SMD/SMT |
| Power Dissipation | 96(W) |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 25.3 nC |
| Number of Elements | 1 |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Drain-Source On-Volt | 800(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 96W |
| Pd - Power Dissipation: | 96 W |
| Continuous Drain Current | 13(A) |
| Gate-Source Voltage (Max) | '±20(V) |
| Total Gate Charge (Qg@Vgs) | 25.3nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.143nF@400V |
| Maximum Drain Source Voltage | 800 V |
| Continuous Drain Current (Id) | 13A |
| Id - Continuous Drain Current: | 13 A |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 360 mΩ |
| Maximum Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance: | 360 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 3.8 V |