NTD360N80S3Z, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017550058
- Артикул
- NTD360N80S3Z
- Бренд
- ON Semiconductor***
- Type
- N Channel
- Brand:
- onsemi
- Series
- SUPERFET III
- Mounting
- Surface Mount
Цена по запросу
(от 219,31 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
800 В 13 А 300 Мом при 10 В, 6,5А 96 Вт 3.8V@300uA N-канальные МОП-транзисторы TO-252 (DPAK) СООТВЕТСТВУЮТ требованиям ROHS
Технические параметры
| Type | N Channel |
| Brand: | onsemi |
| Series | SUPERFET III |
| Mounting | Surface Mount |
| Polarity | N |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | DPAK |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Mounting Style: | SMD/SMT |
| Power Dissipation | 96(W) |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 25.3 nC |
| Number of Elements | 1 |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Drain-Source On-Volt | 800(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 96W |
| Особенности | - |
| Pd - Power Dissipation: | 96 W |
| Continuous Drain Current | 13(A) |
| Gate-Source Voltage (Max) | '±20(V) |
| Total Gate Charge (Qg@Vgs) | 25.3nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.143nF@400V |
| Maximum Drain Source Voltage | 800 V |
| Continuous Drain Current (Id) | 13A |
| Id - Continuous Drain Current: | 13 A |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 360 mΩ |
| Maximum Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance: | 360 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 3.8 V |
| Пороговое напряжение на затворе | 3.8V@300uA |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 96 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 300mΩ@10V, 6.5A |