NTD25P03LT4G, MOSFETs -30V -25A P-Channel
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739204
- Артикул
- NTD25P03LT4G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Width
- 6.22mm
- Brand:
- onsemi
- Series:
- NTD25P03L
Цена по запросу
(от 114,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -25А, 75Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | MOSFET |
| Width | 6.22mm |
| Brand: | onsemi |
| Series: | NTD25P03L |
| Pin Count | 3 |
| Fall Time: | 16 ns |
| Rise Time: | 37 ns |
| Вес, г | 0.34 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252-4 |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 75 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 75 W |
| Typical Gate Charge @ Vgs | 15 nC @ 5 V |
| Vgs - Gate-Source Voltage: | -5 V, +5 V |
| Maximum Gate Source Voltage | -15 V, +15 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 9 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 15 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 25 A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 13 S |
| Maximum Drain Source Resistance | 90 mΩ |
| Maximum Continuous Drain Current | 25 A |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 25 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 75 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |