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NTD18N06LT4G, Транзистор полевой N-канальный 60В 18A

NTD18N06LT4G, Транзистор полевой N-канальный 60В 18A

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Код товара
8067876101
Артикул
NTD18N06LT4G
Бренд
ON Semiconductor***
Type:
MOSFET
Width
6.22mm
Brand:
onsemi
Series:
NTD18N06L
Цена по запросу
(от 140,47 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор полевой MOSFET N-канальный 60В 18A

Технические параметры

Type:MOSFET
Width6.22mm
Brand:onsemi
Series:NTD18N06L
Pin Count3
Fall Time:38 ns
Rise Time:79 ns
Вес, г0.47
Technology:Si
Channel ModeEnhancement
Channel TypeN
Package TypeDPAK(TO-252)
Subcategory:MOSFETs
Channel Mode:Enhancement
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:MOSFET
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:TO-252-3
Transistor Type:1 N-Channel
Product Category:MOSFET
Qg - Gate Charge:11 nC
Number of Channels:1 Channel
Transistor MaterialSi
Transistor Polarity:N-Channel
Pd - Power Dissipation:55 W
Transistor ConfigurationSingle
Maximum Power Dissipation55 W
Typical Gate Charge @ Vgs11 nC @ 5 V
Vgs - Gate-Source Voltage:-5 V, +5 V
Maximum Gate Source Voltage-15 V, +15 V
Number of Elements per Chip1
Typical Turn-On Delay Time:9.9 ns
Maximum Drain Source Voltage60 V
Typical Turn-Off Delay Time:19 ns
Maximum Operating Temperature+175 °C
Minimum Operating Temperature-55 °C
Id - Continuous Drain Current:18 A
Maximum Gate Threshold Voltage2V
Maximum Operating Temperature:+175 C
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:13.5 S
Maximum Drain Source Resistance65 mΩ
Maximum Continuous Drain Current18 A
Rds On - Drain-Source Resistance:65 mOhms
Vds - Drain-Source Breakdown Voltage:60 V
Vgs th - Gate-Source Threshold Voltage:1 V
Factory Pack Quantity: Factory Pack Quantity:2500

Техническая документация