NTB6412ANG, Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001146543
- Артикул
- NTB6412ANG
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Category
- Power MOSFET
Цена по запросу
(от 347 ₽)
Минимальный заказ: 237 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 58A, 3-контактный (2 + язычка), трубка D2PAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 9.65(Max) |
| Package Length | 10.29(Max) |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Структура | N |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 126 |
| Typical Rise Time (ns) | 140 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 167000 |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 400 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 70 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Diode Forward Voltage (V) | 0.96 |
| Typical Gate to Drain Charge (nC) | 35 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 13.5 |
| Typical Reverse Recovery Time (ns) | 85 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 2700@25V |
| Typical Reverse Recovery Charge (nC) | 270 |
| Maximum Drain-Source Resistance (mOhm) | 18.2@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 240 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 150@25V |
| Максимальный ток сток-исток при 25 С Iси макс..А | 58 |