NTB25P06T4G, Транзистор: P-MOSFET; полевой; -60В; -27,5А; 120Вт; D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017566025
- Артикул
- NTB25P06T4G
- Бренд
- ON Semiconductor***
- Type:
- MOSFET
- Brand:
- onsemi
- Fall Time:
- 190 ns
- Rise Time:
- 72 ns
Цена по запросу
(от 183,87 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET |
| Brand: | onsemi |
| Fall Time: | 190 ns |
| Rise Time: | 72 ns |
| Вес, г | 1.73 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 50 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 800 |
| Pd - Power Dissipation: | 120 W |
| Vgs - Gate-Source Voltage: | -15 V, +15 V |
| Typical Turn-On Delay Time: | 14 ns |
| Typical Turn-Off Delay Time: | 43 ns |
| Id - Continuous Drain Current: | 27.5 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 13 S |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |