NTA4151PT1H, MOSFETs PFET SC75 20V 760MA TR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062032389
- Артикул
- NTA4151PT1H
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 20.4 ns
- Rise Time:
- 8.2 ns
- Вес, г
- 0.01
Цена по запросу
(от 19 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 20.4 ns |
| Rise Time: | 8.2 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SC-75-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 2.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 301 mW |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 29 ns |
| Id - Continuous Drain Current: | 760 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.4 S |
| Rds On - Drain-Source Resistance: | 1 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |