NTA4151PT1G, Транзистор: P-MOSFET; -20В; -760мА; 301мВт; SC75
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8041391604
- Артикул
- NTA4151PT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 0.9mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 6,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 0,76A 3-контактный SOT-416 T/R
Технические параметры
| PPAP | No |
| Width | 0.9mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 2.5 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SC-75 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Small Signal |
| Supplier Package | SOT-416 |
| Maximum IDSS (uA) | 0.1 |
| Структура | MOSFET |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 20.4 |
| Typical Rise Time (ns) | 8.2 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 mW |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation (mW) | 301 |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V |
| Maximum Drain Source Resistance | 1 Ω |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Output Capacitance (pF) | 28 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Continuous Drain Current | 760 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.35 |
| Typical Turn-Off Delay Time (ns) | 29 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.72 |
| Typical Gate to Drain Charge (nC) | 0.5 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Gate to Source Charge (nC) | 0.325 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.76 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 156@5V |
| Maximum Drain Source Resistance (mOhm) | 360@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 6 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.301 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 18@5V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.76 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 415 |
| Пороговое напряжение на затворе | 1.5V@100uA |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.76 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.301 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 3Ω@4.5V, 10mA |