NSVT30010MXV6T1G, Bipolar Transistors - BJT DUAL MATCHED PNP GP XTT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739199
- Артикул
- NSVT30010MXV6T1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- NST30010MXV6
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 37,72 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 500 МВт, 420 В при 2 мА, 5 В 100 мА, биполярные транзисторы 2PCSPNP SOT-563 - BJT ROHS
Технические параметры
| Brand: | onsemi |
| Series: | NST30010MXV6 |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-563-6 |
| Transistor Type | 2PCSPNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 500mW |
| Pd - Power Dissipation: | 500 mW |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 420@2mA, 5V |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | -100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 270 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@100mA, 5mA |