NSVMMBT6429LT1G, Bipolar Transistors - BJT NPN Bipolar Trnsistr
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005526575
- Артикул
- NSVMMBT6429LT1G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Series
- MMBT6429L
- Packaging
- Cut Tape or Reel
- Technology
- Si
Цена по запросу
(от 22,50 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | ON Semiconductor |
| Series | MMBT6429L |
| Packaging | Cut Tape or Reel |
| Technology | Si |
| Вес, г | 0.01 |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Configuration | Single |
| Qualification | AEC-Q101 |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 225 mW |
| DC Current Gain HFE Max | 1250 at 100 uA, 5 VDC |
| Gain Bandwidth Product FT | 700 MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Collector- Base Voltage VCBO | 55 V |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 500 at 100 uA, 5 VDC |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 200 mV |