NSVBC848BWT1G, Bipolar Transistors - BJT SS SC70 GP XSTR NPN 30V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005375215
- Артикул
- NSVBC848BWT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Packaging:
- Reel, Cut Tape
- Вес, г
- 0.02
- Power - Max
- 200 mW
Цена по запросу
(от 14,95 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 30 В 100 мА 100 МГц 200 МВт для поверxностного монтажа SC-70-3 (SOT323)
Технические параметры
| Brand: | onsemi |
| Packaging: | Reel, Cut Tape |
| Вес, г | 0.02 |
| Power - Max | 200 mW |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | SC-70, SOT-323 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation: | 200 mW |
| Supplier Device Package | SC-70-3(SOT323) |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 30 V |
| Maximum DC Collector Current: | 100 mA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Cutoff (Max) | 15nA(ICBO) |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 600 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |