NSV60600MZ4T3G, Bipolar Transistors - BJT PNP LOW VCE(SAT)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005375188
- Артикул
- NSV60600MZ4T3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.11
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 75,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 4000 |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 360 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | -6 A |
| Maximum DC Collector Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 120 |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 100 mV |