NST3906DXV6T1G, Bipolar Transistors - BJT Bipolar Transistors - BJT 200mA 40V Dual Switching PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8065616539
- Артикул
- NST3906DXV6T1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- PNP
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 17 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | No |
| Type | PNP |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.02 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | onsemi |
| Package Width | 1.2 |
| Package/Case: | SOT-563-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Package Length | 1.6 |
| Mounting Style: | SMD/SMT |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-563 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Standard Package Name | SOT |
| Factory Pack Quantity: | 4000 |
| Minimum DC Current Gain | 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V |
| Pd - Power Dissipation: | 500 mW |
| Gain Bandwidth Product fT: | 250 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 40 V |
| Continuous Collector Current: | -200 mA |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 60 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@1mA@10mA|0.4@5mA@50mA |