NSS60601MZ4T1G, Транзистор биполярный стандартный, SOT-223-4 / TO-261-4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8042953432
- Артикул
- NSS60601MZ4T1G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- onsemi
Цена по запросу
(от 83,93 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 60V 6A 2000 МВт 4-контактный(3+вкладки) SOT-223 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant with Exemption |
| Series: | NSS60601MZ4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.25 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-223 |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Configuration | Single Dual Collector |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 150 500mA 2V|120 1A 2V|100 2A 2V|50 6A 2V |
| Pd - Power Dissipation: | 2 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 800 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum Operating Frequency | 1 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 6 A |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 6 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 100 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 150 |
| Maximum DC Collector Current (A) | 6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Emitter Voltage | 60 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9 0.1A 1A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |