NSS1C201MZ4T3G, Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006210296
- Артикул
- NSS1C201MZ4T3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- NSS1C201MZ4
- Вес, г
- 0.11
- Technology:
- Si
Цена по запросу
(от 76,59 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Series: | NSS1C201MZ4 |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | SOT-223-4 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 150 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 140 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 120 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 180 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |