NSS12100UW3TCG, Trans GP BJT PNP 12V 1A 1100mW 3-Pin WDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001123361
- Артикул
- NSS12100UW3TCG
- Бренд
- ON Semiconductor***
- HTS
- 8541.21.00.95
- Type
- PNP
- EU RoHS
- Compliant
- Military
- No
Цена по запросу
(от 44 ₽)
Минимальный заказ: 1574 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.21.00.95 |
| Type | PNP |
| EU RoHS | Compliant |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2 |
| Package Height | 0.75(Max) |
| Package Length | 2 |
| Product Category | Bipolar Power |
| Supplier Package | WDFN |
| Структура | pnp |
| Standard Package Name | DFN |
| Minimum DC Current Gain | 75@1A@2V|100@500mA@2V|200@10mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1100 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 12 |
| Maximum Transition Frequency (MHz) | 200(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.15@0.01A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.04@0.005A@0.05A|0.225@0.05A@0.5A|0.44@0.1A@1A|0.1@0.002A@0.1A|0.06@0.01A@0.1A |