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NJVMJD47T4G, Bipolar Transistors - BJT BIP NPN 1A 250V TR

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Код товара
8025186592
Артикул
NJVMJD47T4G
Бренд
ON Semiconductor***
HTS
8541.29.00.95
Tab
Tab
PPAP
Yes
SVHC
Yes
Цена по запросу
(от 109 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.29.00.95
TabTab
PPAPYes
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.05
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
EDA / CAD ModelsNJVMJD47T4G by Ultra Librarian
Product CategoryBipolar Power
Supplier PackageDPAK
Структураnpn
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain30@300mA@10V|10@1A@10V
Maximum Base Current (A)0.6
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)10(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)1@0.2A@1A