NJVMJD2955T4G, Bipolar Transistors - BJT BIP PNP 10A 60V TR
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- Код товара
- 8004652272
- Артикул
- NJVMJD2955T4G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.26
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 91,67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.26 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Product Category: | Bipolar Transistors-BJT |
| Country of Origin: | VN |
| Структура | pnp |
| Country of Assembly: | Not Available |
| Transistor Polarity: | PNP |
| Country of Diffusion: | Not Available |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 20 W |
| DC Current Gain hFE Max: | 100 at 4 A, 10 VDC |
| Gain Bandwidth Product fT: | 2 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 70 V |
| Maximum DC Collector Current: | 10 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 20 at 4 A, 10 VDC |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 1.1 V |