NJVMJD253T4G, Bipolar Transistors - BJT BIP DPAK PNP 4A 100V TR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034090467
- Артикул
- NJVMJD253T4G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Packaging:
- Reel, Cut Tape
- Вес, г
- 0.05
- Technology:
- Si
Цена по запросу
(от 98,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Packaging: | Reel, Cut Tape |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | TO-252/DPAK |
| Manufacturer: | onsemi |
| Package/Case: | DPAK-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | NPN, PNP |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 12.5 W |
| DC Current Gain hFE Max: | 180 |
| Gain Bandwidth Product fT: | 40 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 4 A |
| Maximum DC Collector Current: | 8 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 40 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Максимально допустимый ток к ( Iк макс.А) | 4 |