NJVMJD243T4G, Bipolar Transistors - BJT BIP NPN 4A 100V TR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006232174
- Артикул
- NJVMJD243T4G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Series
- MJD243
- Packaging
- Cut Tape or Reel
- Вес, г
- 0.35
Цена по запросу
(от 94,19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | ON Semiconductor |
| Series | MJD243 |
| Packaging | Cut Tape or Reel |
| Вес, г | 0.35 |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Configuration | Single |
| Qualification | AEC-Q101 |
| Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Pd - Power Dissipation | 12.5 W |
| DC Current Gain HFE Max | 180 at 200 mA, 1 VDC |
| Gain Bandwidth Product FT | 40 MHz |
| Emitter- Base Voltage VEBO | 7 V |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 4 A |
| Maximum DC Collector Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain Hfe Min | 40 at 200 mA, 1 VDC |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 300 mV |
| Максимально допустимый ток к ( Iк макс.А) | 4 |