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NJVMJB44H11T4G, Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 2 W, TO-263 (D2PAK), Surface Mount

NJVMJB44H11T4G, Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 2 W, TO-263 (D2PAK), Surface Mount

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Код товара
8591109906
Артикул
NJVMJB44H11T4G
Бренд
ON Semiconductor***
MSL
MSL 1-Unlimited
Brand:
onsemi
Вес, г
0.1
No. of Pins
3Pins
Цена по запросу
(от 251 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

MSLMSL 1-Unlimited
Brand:onsemi
Вес, г0.1
No. of Pins3Pins
Technology:Si
Subcategory:Transistors
КорпусTO-263
Manufacturer:onsemi
Package/Case:D2PAK-3
Product Type:BJTs-Bipolar Transistors
QualificationAEC-Q101
Configuration:Single
Qualification:AEC-Q100
Mounting Style:SMD/SMT
Power Dissipation2W
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor MountingSurface Mount
Transistor PolarityNPN
Transistor Polarity:NPN
Transition Frequency50MHz
Transistor Case StyleTO-263(D2PAK)
Factory Pack Quantity:800
DC Current Gain hFE Min40hFE
Pd - Power Dissipation:50 W
Operating Temperature Max150°C
Gain Bandwidth Product fT:50 MHz
Emitter- Base Voltage VEBO:5 V
Continuous Collector Current10A
Collector Emitter Voltage Max80V
Maximum DC Collector Current:10 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hFE Min:60 at 2 A, 1 V
Collector- Emitter Voltage VCEO Max:80 V
Collector-Emitter Saturation Voltage:1 V

Техническая документация